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A light-emitting diode (LED) is a two-lead semiconductor light source. It is a p–n junction diode, which emits light when activated.[4] When a suitable voltage is applied to the leads, electrons are able to recombine with electron holes within the device, releasing energy in the form of photons. This effect is called electroluminescence, and the color of the light (corresponding to the energy of the photon) is determined by the energy band gap of the semiconductor.

PAM-XIAMEN offers LED wafer, including GaN based LED wafer and GaAs based LED wafer as follows:

LED wafer wavelength:

Blue LED wafer: 445-475nm

Green LED wafer:510-530nm

Red LED wafer: 585,615,620-630nm

Yellow LED wafer: 587-592nm
Yellow-Green LED wafer:565-575nm

LD wafer: 808/940/980nm
Led fabrication

LED wafer structure:

1.Blue LED wafer:  
p-GaN/p-AlGaN/InGaN/GaN/n-GaN/u-GaN

p-GaN 0.2um

p-AlGaN 0.03um

InGaN/GaN(active area) 0.2um

n-GaN 2.5um

Etch stop   1.0um

u- GaN (buffer) 3.5um

Al2O3 (Substrate) 430um

2.Green LED wafer:

3.Red LED wafer: 
P+GaAs/p-GaP/p-AlGaInP/MQW-AlGaInP/n-AlGaInP/DBR n-ALGaAs/AlAs/Buffer/GaAs substrate

4.Yellow LED wafer:

5.LD wafer:808nm,905nm or Provide for structure

1)808nm

composition	thickness	dopping
GaAs	150nm	C,P=1E20
AlGaAs layers	1.51	C
AlGaInAs QW
AlGaAs layers	2.57um	Si
GaAs Substrate	350um	N=1-4E18

2)905nm

composition	thickness	dopping
GaAs	150nm	C,P=1E20
AlGaAs layers	1.78um	C
AlGaInAs QW
AlGaAs layers	3.42um	Si
GaAs Substrate	350um	N=1-4E18

LEDs are a specialised form of p-n junction diode that have been designed to optimise their electroluminescence. As a result the LED structure and LED fabrication techniques need to ensure that the light output is optimised.

There are a number of different aspects to the LED structure and LED fabrication. These include not only the LED fabrication itself, but also the packaging of the LED once the semiconductor chip itself has been fabricated:

1)Homojunction = a p-n junction made out of two differently doped semiconductors that are of the same material (i.e having the same band gap).

2)Heterojunction = junction formed between two different band gaps semiconductors.

Heterostructure device = semiconductor device structure that has junctions between different bandgap materials

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