Products

A light-emitting diode (LED) is a two-lead semiconductor light source. It is a p–n junction diode, which emits light when activated.[4] When a suitable voltage is applied to the leads, electrons are able to recombine with electron holes within the device, releasing energy in the form of photons. This effect is called electroluminescence, and the color of the light (corresponding to the energy of the photon) is determined by the energy band gap of the semiconductor.

PAM-XIAMEN offers LED wafer, including GaN based LED wafer and GaAs based LED wafer as follows:
PAM-XIAMEN's GaN(gallium nitride)-based LED epitaxial wafer is for ultra high brightness blue and green light emitting diodes (LED) and laser diodes (LD) application.
LED wafer wavelength:
Blue LED wafer: 445-475nm
Green LED wafer:510-530nm
Red LED wafer: 585,615,620-630nm
Yellow LED wafer: 587-592nm
Yellow-Green LED wafer:565-575nm
LD wafer: 808/940/980nm
Led fabrication

LED wafer structure:

1.Blue LED wafer:  
p-GaN/p-AlGaN/InGaN/GaN/n-GaN/u-GaN
p-GaN 0.2um
p-AlGaN 0.03um
InGaN/GaN(active area) 0.2um
n-GaN 2.5um
Etch stop   1.0um
u- GaN (buffer) 3.5um
Al2O3 (Substrate) 430um

2.Green LED wafer:

















3.Red LED wafer: 
P+GaAs/p-GaP/p-AlGaInP/MQW-AlGaInP/n-AlGaInP/DBR n-ALGaAs/AlAs/Buffer/GaAs substrate

4.Yellow LED wafer:

5.LD wafer:808nm,905nm or Provide for structure

1)808nm
composition
thickness
dopping
GaAs
150nm
C,P=1E20
AlGaAs layers
1.51
C
AlGaInAs QW
 
 
AlGaAs layers
2.57um
Si
GaAs Substrate
350um
N=1-4E18

2)905nm
composition
thickness
dopping
GaAs
150nm
C,P=1E20
AlGaAs layers
1.78um
C
AlGaInAs QW
 
 
AlGaAs layers
3.42um
Si
GaAs Substrate
350um
N=1-4E18

LEDs are a specialised form of p-n junction diode that have been designed to optimise their electroluminescence. As a result the LED structure and LED fabrication techniques need to ensure that the light output is optimised.

There are a number of different aspects to the LED structure and LED fabrication. These include not only the LED fabrication itself, but also the packaging of the LED once the semiconductor chip itself has been fabricated:

1)Homojunction = a p-n junction made out of two differently doped semiconductors that are of the same material (i.e having the same band gap).

2)Heterojunction = junction formed between two different band gaps semiconductors.
Heterostructure device = semiconductor device structure that has junctions between different bandgap materials

Related Products
led wafer production
led wafer level packaging
led wafer test
led wafer manufacturers
led wafer fabrication process
led wafer size
led wafer level packaging


If you find them interesting, please visit us: www.qualitymaterial.net or contact with us: gan@powerwaywafer.com.
Post a Comment