Bonding Line-Patterned In0.5Ga0.5 P Layer on GaP Substrate for the Successive Growth of High-Brightness LED Structures

The heteroeptixial integration of the III-V semiconductor compound, which was limited by lattice mismatch, can now be accomplished by using the wafer bonding process. In this study, a line-patterned  layer was successfully transferred to the GaP wafer through the wafer bonding process for the successive growth of high-brightness light-emitting diode (LED) structures. © 2004 The Electrochemical Society. All rights reserved.

Source:IOPscience

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