Feb 26, 2020

Ag ∕ Au Diffusion Wafer Bonding for Thin- GaN LED Fabrication

In this study we successfully demonstrate a method for  diffusion wafer bonding. We were able to achieve a high-melting-point bonding interface at a relatively low bonding temperature of . The  interdiffusion coefficient is defined against the Au content. Au atoms have a faster diffusion rate in the  matrix layer, which causes the  interface to move toward the Au side over time. The use of this method of  diffusion bonding makes the fabrication of high-power thin- light-emitting diode chips on Si wafers a feasible possibility.


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