Jan 20, 2020

Bonding of Multiple Wafers for High Throughput LED Production

High-brightness light emitting diodes (HB LEDs) are quickly gaining momentum as the next generation devices for technical and general lighting. HB LEDs are normally grown on compound semiconductor or sapphire substrates that are 2" to 4" in diameter. The device wafers are then bonded to CTE mismatched Si substrates. The bonding process requires the post bond cool-down rate to be low (<2oC/minute) thereby considerably increasing the bond cycle time. We have developed a production-worthy wafer bonding solution where multiple 2", 3" and 4" wafer pairs are simultaneously bonded in one process cycle. Up to an 8-fold increase in throughput can be realized with minimal investment since the process is performed with one bond tool.


For more information, please visit our website: www.semiconductorwafers.net,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

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