We demonstrated 256–278 nm AlGaN-based
deep-ultraviolet (DUV) light-emitting diodes (LEDs) on Si substrates by using
epitaxial lateral overgrowth (ELO) AlN templates. A 4-µm-thick ELO-AlN layer
grown in a striped pattern along the <1010> direction can be coalesced
successfully. Low-threading-dislocation-density AlN templates were achieved on
Si wafers by a combination of the ELO and NH3 pulsed-flow multilayer growth
methods. Single-peaked AlGaN LEDs with wavelengths shorter than 280 nm were
achieved by fabricating them on ELO-AlN templates on Si. These low-cost
AlGaN-based DUV LEDs on Si substrates are expected to be integrated on the same
chips with Si-based electrical circuits.
Source:IOPscience
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