The Si doped expitaxial growth of GaAs by the
rolling boat method and the fabrication of efficient light emitting diodes are
represented. During the growth on GaAs (111) B substrate, highly efficient
diodes are obtained when the amount of Si added to 5 g of Ga is 6 mg and the Ga
solution is baked at 910°C for 1 hour prior to the growth. The highest power
efficiency is 9.7 % for an uncoated flat diode. The epitaxial wafer uniformity
depends upon whether growth spirals occur or not. The efficiency of light
emitting diodes fabricated from a wafer with growth spirals varies from ~2 to
~9 %. On the other hand, that with no spirals varies from ~6 to ~9 %. The
occurrence of the growth spirals can be controlled by changing the rolling
start time.
Source:IOPscience
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