Previously, we reported that a thin GaN
interlayer approach has been developed for growth of 340 nm ultraviolet light
emitting diodes (UV-LEDs) with significantly improved performance. In this
paper, more recent results on the further development of UV-LEDs with shorter
wavelengths are reported, and the limitation of the wavelength of the UV-LEDs
that can be pushed to, while retaining high device performance using the
approach has been investigated. Transmission electron microscopy and
device-performance data, including electrical and optical characteristics,
indicated that the thin GaN interlayer approach can be effectively employed for
growth of UV-LEDs to an emission wavelength approaching at least 300 nm. The
approach should be taken into account in growth of UV-LEDs on sapphire
substrates, as it provides a simple but effective growth method to achieve
UV-LEDs with high performance. This paper also reports that a micro-LED array
using the UV-LED wafer has been successfully fabricated, offering versatile
micro-structured UV light sources for a wide range of applications.
Source:IOPscience
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