GaN-based light-emitting diodes (LEDs) grown
on Si(111) substrates were fabricated with a vertical electrode method by using
wafer bonding technology. The fabricated vertical LEDs showed a lower operating
voltage and larger light output power than conventional LEDs due to enhancement
in current spreading and reduction in tensile strain. The light output power of
the vertical structured LEDs was 2.6 times higher than that of conventional
LEDs, with an operating voltage at 20 mA reduced from 3.5 to 3.2 V.
Source:IOPscience
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