We have studied the properties of
blue-LED wafers grown on GaN with similar dislocation density and different
surface flatness. Results indicate that the smooth surface morphology of the
undoped GaN layer leads to better layer periodicity in multiple quantum well
(MQW) and smooth surface morphology of LED wafers. The surface flatness of the
undoped GaN layer has little effect on the forward voltage and output power of
the LED. However, the reverse leakage current and the lifetime of the LED wafer
grown on the flatter GaN layer improved evidently. On the other hand, wafers
grown on the GaN layer with worse surface flatness show better electrostatic
discharge (ESD) characteristics.
Source:IOPscience
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