Apr 25, 2019

Light-Emitting Diode Based on ZnO and GaN Direct Wafer Bonding

We report on direct wafer bonding of an n-type ZnO wafer to a III–nitride light-emitting diode (LED) structure. Wafers were successfully bonded in nitrogen at 600 °C. ZnO was then selectively etched to form a p-type electrode having a truncated hexagonal pyramid shape. This wafer bonded LED was evaluated with transmission, reflectivity, current–voltage (I–V), and electroluminescence (EL) measurements. This electrode revealed to be highly transparent and suitable for improving light extraction.


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