We investigated the emission
wavelength uniformity of 200-mm GaN-on-Si based blue light-emitting diode (LED)
wafer grown by metalorganic vapor phase epitaxy (MOVPE). The larger the Si
substrate diameter becomes, the more difficult to obtain uniform distribution
of the emission wavelength because of the larger bow during growth, resulting
in larger on-wafer inhomogeneity in growth temperature. Owing to the GaN-on-Si
buffer strain management, optimized gas flow condition, and precise control of
temperature balance in a reactor, we have achieved high thickness and crystal
quality uniformity over the 200-mm GaN-on-Si based blue LED wafer. As a result,
excellent blue photoluminescence emission wavelength uniformity from the
InGaN-multi-quantum wells can be demonstrated on a 200-mm wafer with a standard
deviation of 2.53 nm (0.57%). Less wavelengths binning with these highly
uniform emission over the 200-mm wafer show the capability of sustainable cost
reduction in LED fabrication based on GaN-on-Si technology.
Source:IOPscience
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