A Si/SiO2/GaN-light-emitting-diode (LED) wafer is proposed as a new structure for the monolithic integration of both Si circuits and GaN-based optical devices. Surface-activated bonding was performed to transfer a Si layer from a silicon-on-insulator substrate to a SiO2/GaN-LED substrate. Transmission electron microscopy observation revealed that a defect-free Si layer was formed on the SiO2/GaN-LED substrate without interfacial voids. The crystalline quality of the Si layer, which is characterized by an X-ray rocking curve, was markedly improved by flattening the SiO2/GaN-LED substrate before bonding. Finally, a micro-LED array was successfully fabricated on the Si/SiO2/GaN-LED wafer without the delamination of the Si layer.
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