Highlights
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- Sputter deposited transparent contact layer is introduced for GaN LEDs.
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- Buried contact islands eliminate an ohmic contact failure on p-GaN.
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- Device performances are improved in large GaN blue LEDs.
- GaN;
- Transparent contact layer;
- LED
- Source: Sciencedirect
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Abstract
Sn-doped ZnO/Ag/Sn-doped ZnO (ZAZ) multilayers prepared using sputtering process was employed in GaN-based blue light-emitting diodes(LEDs) as transparent contact layers (TCLs). The ZAZ layer had better optical and electrical properties without any thermal annealing. The ZAZ TCLs improved the current spreading on p-GaN layer and increased the light output power in the large area devices. The efficiency droop was also quite small in the case of adopting a ZAZ TCL in GaN-based LEDs. These results are promising for the development of a ZAZ TCL using sputtering process for GaN LED applications.
Graphical abstract
We introduced Sn-doped ZnO/Ag/Sn-doped ZnO (ZAZ) multistructure as a new transparent contact layer (TCL), which is fabricated by a sputtering process for GaN blue LEDs. It has better electrical and optical properties than ITO without thermal annealing. The new ZAZ TCL shows better device performances even in a large area device than a conventional ITO TCL
