Enhancement of light extraction in GaN based LED structures using TiO2 nano-structures

TiO₂ nano-patterns were formed on the indium-tin-oxide (ITO) layer of GaN based light emitting diodes (LEDs) without a residual layer using a sol-imprinting process. A polydimethylsiloxane mold replicated from a Si master was used as the imprint stamp for the sol-imprinting process. The light extraction efficiency of LEDs was enhanced by the TiO₂ nano-patterns formed on the ITO layer because the TiO₂ nano-patterns locally modulated the refractive index of the ITO layer and enhanced the scattering of light at the ITO layer. Consequently, directly fabricated TiO₂ nano-patterns on the ITO layer can esoln hance the light extraction efficiency of LEDs without plasma-induced damage.

Keywords

• TiO₂; 
• Nano-pattern; 
• Photon extraction efficiency; 
• Photoluminescence; 
• Sol-imprint;
• Light emitting diode (LED)
• 
  
• Source:Sciencedirect
  
  If you need more information about led wafer, please visit our website:http://www.powerwaywafer.com, send us email at powerwaymaterial@gmail.com.