TiO2 nano-patterns were formed on the indium-tin-oxide (ITO) layer of GaN based light emitting diodes (LEDs) without a residual layer using a sol-imprinting process. A polydimethylsiloxane mold replicated from a Si master was used as the imprint stamp for the sol-imprinting process. The light extraction efficiency of LEDs was enhanced by the TiO2 nano-patterns formed on the ITO layer because the TiO2 nano-patterns locally modulated the refractive index of the ITO layer and enhanced the scattering of light at the ITO layer. Consequently, directly fabricated TiO2 nano-patterns on the ITO layer can esoln hance the light extraction efficiency of LEDs without plasma-induced damage.
Keywords
- TiO2;
- Nano-pattern;
- Photon extraction efficiency;
- Photoluminescence;
- Sol-imprint;
- Light emitting diode (LED)
- Source:Sciencedirect
If you need more information about led wafer, please visit our website:http://www.powerwaywafer.com, send us email at powerwaymaterial@gmail.com.
No comments:
Post a Comment