The characteristics of GaN-based blue LED on Si substrate
InGaN
multiple quantum well (MQW) light-emitting diodes (LEDs), grown by metalorganic
chemical vapor deposition (MOCVD) on Si (1 1 1) substrates, were
successfully bonded and transferred onto new Si substrate. After chemical
etching Si substrate and inductively coupled plasma (ICP) etching buffer layer,
vertical structure GaN blue LEDs were fabricated. The characteristics
of the lateral structure LEDs (grown on Si substrate) and the vertical
structure LEDs (bonded on new Si substrate) have been investigated, and the
performance of the vertical structure LEDs have obviously been improved compared
to the lateral structure LEDs. The improved performance is due to the smaller
tensile stress and series resistance in the vertical LEDs than that in lateral
LEDs. The electroluminescence difference between vertical LEDs chips and the
vertical LEDs lamps can be explained by the difference in heat dissipation.
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