Improved device performance of AlGaInP-based vertical light-emitting diodes with low-n ATO antireflective coating layer
We
reported the effect of low-n Sb-doped tin oxide (ATO) antireflective (AR)
coating layer on the device performance of AlGaInP-based red vertical
light-emitting diodes (VLEDs). The ATO films with a quarter wavelength
thickness of ∼90 nm were deposited
on the p-GaP window layer by an oblique-angle sputtering method. The ATO films
with inclined nanocolumnar structures indicated a low refractive index of ∼1.8 at emitting wavelengths of AlGaInP-based VLEDs.
For VLED with low-n ATO AR coating layer, the light output power was increased
by 26% at 350 mA with no deterioration of the electrical property compared
to the conventional LED. Also, the enhanced light extraction led to the
reduction in the electroluminescence peak wavelength shift at higher injection
currents.
Source:Microelectronic
Engineering
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