The
advantages of GaN based light-emitting diodes (LEDs) with strain-compensated
p-AlGaN/InGaN superlattice (SL) last quantum barrier (LQB) are investigated
numerically. The simulation results indicate that the output power and internal
quantum efficiency have been improved significantly by replacing the last
barrier of the conventional u-GaN and p-GaN with p-AlGaN/InGaN SL. These
improvements are mainly attributed to the improvement of electron confinement
and hole injection efficiency caused by mitigating the polarization-induced
band bending of last barrier with the new designed structure. Moreover, the
efficiency droop of the LEDs is markedly improved by using p-AlGaN/InGaN SL as
last barrier.
Source:
Optics Communications
No comments:
Post a Comment