Widespread
implementation of light-emitting diodes for solid-state lighting applications
has been hindered by the high cost of the traditionally used heteroepitaxial
substrates, sapphire and silicon carbide. The growth of GaN LEDs on
silicon substrates would give significant cost savings. This chapter will
summarize some of the challenges associated with the growth of GaN on silicon,
discuss various strategies for alleviating the lattice mismatch and tensile
strain imparted during the growth, and review efforts for the growth of
light-emitting diodes on silicon substrates.
Source:
Nitride Semiconductor Light-Emitting Diodes (LEDs)
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