4 – Gallium nitride (GaN) on silicon substrates for LEDs

Widespread implementation of light-emitting diodes for solid-state lighting applications has been hindered by the high cost of the traditionally used heteroepitaxial substrates, sapphire and silicon carbide. The growth of GaN LEDs on silicon substrates would give significant cost savings. This chapter will summarize some of the challenges associated with the growth of GaN on silicon, discuss various strategies for alleviating the lattice mismatch and tensile strain imparted during the growth, and review efforts for the growth of light-emitting diodes on silicon substrates.

Source: Nitride Semiconductor Light-Emitting Diodes (LEDs)

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