GaN
films and multiple quantum well (MQW) LED wafers were grown by a metal-organic
chemical vapor deposition (MOCVD) system under low pressure. The growth process
was in situ investigated by normal incidence reflectance measurement. The
properties of GaN layers were measured by double crystal X-ray diffraction
(DCXRD), Hall method and photoluminescence, respectively. The results revealed
that not only the properties of GaN layers but also the properties of the blue
MQW LED wafers were obviously influenced by the growth mode in the initial
stage of high-temperature (HT) GaN growth. The full-width at half-maximum
(FWHM) values of the DCXRD peaks, as well as the background carrier concentrations,
were obviously decreased when the 3D growth time of HT GaN at the initial stage
was prolonged properly. This implies that the dislocation density in GaN films
decreased. Moreover, the LED properties, such as the leakage current and the
LED output power, would be largely improved if the 3D growth time of HT GaN in
the initial stage was proper.
Source:
Physica B: Condensed Matter
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