A
GaN light emitting diodes (LED)
wafer was coated with Pt, Au, Al and In. The photoluminescence (PL)
excited from wafer back shows that Pt and Au coating can quench the PL while In
and Al can increase the PL intensity by eight times and make the wavelength red
shift. When connected to the Pt with a wire, indium can also quench the PL. The
potential difference between any two kinds of the metals was measured and the
PL intensity from each coated area showed a remarkable pertinence to the
coating metal potentials. A built-in potential barrier model is proposed to
explain results.
Source: Journal
of Luminescence
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If you need more information about The influence of the coating metals with various work function on the photoluminescence of a GaN-based blue LED wafer, please visit our website:http://www.qualitymaterial.net, send us email at powerwaymaterial@gmail.com.
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